Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 18 V

Maximum Gate-Source Voltage |Vgs|: 3 V

Maximum Drain Current |Id|: 0.05 A

Maximum Junction Temperature (Tj): 175 °C

Drain-Source Capacitance (Cd): 11 pF

Maximum Drain-Source On-State Resistance (Rds): 200 Ohm

Package: TO72