Set of 2 Transistors GT15J101 IGBT High Power 600 V - 15/30 A

Features :

- Transistors npn high voltage IGBT GT15J101 of Toshiba

- High voltage : 600 V (Vce) 

- Collector current : 15 A (30 A on pulses of 1 mS)

- Handling power : 100 W

- Saturation voltage at 15 A : 3 V

- Turn-on time: 400 nS

- Turn-off time: 500 nS

- Complete documentation on : http://www.datasheetcatalog.org/datasheet/toshiba/1522.pdf

Composition:

- Set of 2 transistors npn high voltage IGBT GT15J101 of Toshiba

- 2 isolator kits for mounting on radiator

Use :

- Transistors created on a mixed field effect and bipolar technology allowing to obtain exceptional features in gain, very high input impedance, ultra-fast switching speed

- Components used, among other things, in the oscillators and power supplies, heaters and induction furnaces.